کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
701119 1460818 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Chemical and structural transformations of silicon submitted to H2 or H2/CH4 microwave plasmas
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Chemical and structural transformations of silicon submitted to H2 or H2/CH4 microwave plasmas
چکیده انگلیسی

Silicon substrates are often used to synthesize polycrystalline diamond films by microwave plasma assisted chemical vapour deposition technique (MPCVD). In the case of highly oriented diamond films, several steps are employed to carefully prepare the silicon surface (pre-treatment steps), to nucleate diamond crystals (nucleation step) and to thick the film (growth step). In this study, we characterize {100} silicon substrates and diamond released from its silicon substrate by electronic microscopies (TEM and SEM), by Atomic Force Microscopy (AFM) and by X-ray photoelectron spectroscopy (XPS), to follow the substrate transformations after each step, particularly the formation and the evolution of the silicon carbide and to characterise the diamond films grown on the carburised silicon. We show that according to the experimental conditions and the level of surface/gas contamination by carbon and silicon species, isolated islands or continuous β-SiC compound are formed over the silicon surface and can generate defects such as voids or strip structures that influence the subsequent diamond nucleation and growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 17, Issues 4–5, April–May 2008, Pages 428–434
نویسندگان
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