کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
701132 1460818 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation with an improved plasma model utilized to design a new structure of microwave plasma discharge for chemical vapor deposition of diamond crystals
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Simulation with an improved plasma model utilized to design a new structure of microwave plasma discharge for chemical vapor deposition of diamond crystals
چکیده انگلیسی

A new structure of microwave plasma for chemical vapor deposition of diamond crystal is proposed. The structure is designed numerically, for which an improved model given in our previous work [H. Yamada et al., J. Appl. Phys. 101 (2007), art. no. 063302.] is utilized. The experimental observations and numerical predictions agree well with each other. It is demonstrated experimentally that the proposed structure can achieve a growth rate larger than 50 μm/h over an area 1 in. in diameter.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 17, Issues 4–5, April–May 2008, Pages 494–497
نویسندگان
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