Effect of vacuum annealing on field emission from heavily phosphorus doped homoepitaxial (111) diamond

Vacuum anneal treatments effects on field emission properties of phosphorus doped diamond are discussed. The C1s core level of diamond is characterized by X-ray photoelectron spectroscopy (XPS). With increasing annealing temperature, firstly oxygen desorption takes place from surface, which induce surface reconstruction followed by graphitization of surface. Field emission properties, therefore, strongly depend on vacuum anneal temperature. The threshold voltage of diamond annealed at 900 °C is the lowest. Fowler–Nordheim plots indicate that diamond annealed at 900 °C has the lowest barrier height, which is in good agreement with electron affinities as measured on carbon reconstructed surface. Further increased annealing temperature induces surface graphitization, which causes a threshold voltage increase of field emission.