کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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701198 | 1460818 | 2008 | 4 صفحه PDF | دانلود رایگان |
Cold cathodes for vacuum field emission have many interesting applications including display devices. Chemical vapor deposited (CVD) diamond has long been considered such a candidate. A nanodiamond film with ridge features was grown on a highly doped (resistivity = 0.0035 Ω-cm) n-type silicon substrate by plasma enhanced CVD process using a H2/CH4/N2 gas mixture. The overall planar nanodiamond film was characterized for vacuum field emission in diode configuration. A low turn on field of ~ 2.3 V/µm at 1 µA was observed. The cathode was able to produce 150 µA at a field of 6.6 V/µm. This field emission behavior can be attributed to a combination of high sp2 content, higher electrical conductivity by nitrogen incorporation in the nanodiamond film and a high geometrical field enhancement factor because of the sharp ‘ridge’ like features on the surface.
Journal: Diamond and Related Materials - Volume 17, Issues 4–5, April–May 2008, Pages 790–793