کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701200 | 1460818 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Taguchi optimization of device parameters for fullerene and Poly (3-octylthiophene) based heterojunction photovoltaic devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Taguchi optimization of device parameters for fullerene and Poly (3-octylthiophene) based heterojunction photovoltaic devices Taguchi optimization of device parameters for fullerene and Poly (3-octylthiophene) based heterojunction photovoltaic devices](/preview/png/701200.png)
چکیده انگلیسی
Photovoltaic devices were fabricated with the structure ITO/fullerene/Poly (3-octylthiophene)/Au and device parameters were optimized using Taguchi optimization technique. Optimized parameter such as fullerene and Poly (3-octylthiophene) film thickness, annealing temperature and annealing duration are found to be as 110 nm, 45 nm, 120° C and 15 min respectively. Fabricated device with optimized parameters shows short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF) as 2 × 10− 4 mA/cm2, 0.47 V and 0.25 respectively. Effect of solvent casting on C60 layer was studied which shows formation of uneven surface providing large interfacial area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 17, Issues 4–5, April–May 2008, Pages 799–803
Journal: Diamond and Related Materials - Volume 17, Issues 4–5, April–May 2008, Pages 799–803
نویسندگان
G. Kalita, S. Adhikari, H.R. Aryal, P.R. Somani, S.P. Somani, M. Sharon, M. Umeno,