کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701269 | 1460819 | 2007 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Investigation of nanocrystalline diamond films grown on silicon and glass at substrate temperature below 400 °C Investigation of nanocrystalline diamond films grown on silicon and glass at substrate temperature below 400 °C](/preview/png/701269.png)
We present investigation of nanocrystalline diamond films deposited in a wide temperature range. The nanocrystalline diamond films were grown on silicon and glass substrates from hydrogen based gas mixture (methane and hydrogen) by microwave plasma CVD process. Film composition, nano-grain size and surface morphology were investigated by Raman spectroscopy and scanning electron microscopy. All samples showed diamond characteristic line centred at 1332 cm− 1 in the Raman spectrum. Nanocrystalline diamond layers revealed high surface flatness (under 10 nm) with crystal size below 60 nm. Surface morphology of grown films was well homogeneous over glass substrates due to used mechanical seeding procedure. Very thin films (40 nm) were successfully grown on glass slides (i.e. standard size 1 × 3″). An increase in delay time was observed when the substrate temperature was decreased. A possible origin for this behaviour was discussed.
Journal: Diamond and Related Materials - Volume 16, Issues 4–7, April–July 2007, Pages 744–747