کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
701274 1460819 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping
چکیده انگلیسی

A systematic investigation of heavily boron-doped diamond (001) surfaces was performed by atomic force microscopy. Heavily boron-doped diamond surfaces produced by chemical vapor deposition with boron/carbon (B/C) ratios of more than 1600 ppm in the gas phase were rough, whereas an unintentionally doped diamond surface was atomically flat. These results show that the surface roughening is due to heavy doping by boron during homoepitaxial diamond growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 16, Issues 4–7, April–July 2007, Pages 767–770
نویسندگان
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