کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701280 | 1460819 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carrier compensation in (001) n-type diamond by phosphorus doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Phosphorus (P) doping of (001) diamond was investigated focusing on [CH4]/[H2] and [PH3]/[CH4] gas flow ratio dependence during homoepitaxial growth. P concentration was primarily controlled by gas flow ratio in the same manner as (111) doping, although the controllable range stayed narrow due to lower doping efficiency. Electrical properties of (001) P-doped diamond films were investigated by Hall effect measurements and the doping level dependence of carrier compensation was discussed. The compensation ratio remained almost constant with increasing P concentration, indicating that P doping itself induces acceptor states compensating P donors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 16, Issues 4–7, April–July 2007, Pages 796–799
Journal: Diamond and Related Materials - Volume 16, Issues 4–7, April–July 2007, Pages 796–799
نویسندگان
Hiromitsu Kato, Satoshi Yamasaki, Hideyo Okushi,