MESFET fabricated on deuterium-implanted polycrystalline diamond

Cr- and Al-gate MESFETs have been fabricated on deuterium-implanted polycrystalline diamond and characterized both in DC and RF regime. Their performances are compared with those of similar devices fabricated on plasma hydrogenated polycrystalline diamond, which suffer for instabilities related to the large sensitivity of the channel to surface adsorbates. It is shown that similar characteristics can be achieved both in MESFETs with deuterium-implanted and plasma hydrogenated diamond.