کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701327 | 1460819 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 16, Issues 4–7, April–July 2007, Pages 1020–1024
Journal: Diamond and Related Materials - Volume 16, Issues 4–7, April–July 2007, Pages 1020–1024
نویسندگان
M. Brezeanu, T. Butler, N.L. Rupesinghe, G.A.J. Amaratunga, S.J. Rashid, F. Udrea, M. Avram, G. Brezeanu,