X-ray topographic study of defect in p− diamond layer of Schottky barrier diode

• We show the reverse leakage current of some Schottky diodes and the distribution of defects in the diode by using X-ray topography.
• The minimum and maximum defect densities in each device were about 3 × 103 and about 9 × 104 /cm2, respectively.
• When the device performance defined by the leakage current at threshold voltage, the device performance depends on several types of defects, each having its own contribution factor, mdefect.

Semiconducting diamond has received significant attention as a material for use in power devices owing to its high breakdown characteristics and high carrier mobility in high-temperature, high-voltage environments. Several research groups have postulated that the density of defects is a critical issue for the development of high-performance devices. In addition, they have suggested that a high-quality crystal with a flat surface and a low defect density is required for achieving high and stable performance.In this study, we investigated the reverse leakage current of some Schottky barrier diodes and the defect distribution in the area of each Schottky electrode by using X-ray topography.