The characterization of nanocrystal graphite films deposited by ECR plasma sputtering

We investigated the deposition of carbon films at the condition of high plasma density using ECR plasma sputtering. High density of plasma with low electron temperature was obtained in the neighborhood of the substrate by the control of the magnetic flux density. The nanocrystal graphite in size less than 60 nm was deposited on the Si(1 0 0) substrates by the sputtering of graphite target in argon atmosphere at room temperature. The nanocrystal graphite films deposited at high plasma density (5.0×1011 cm−3) and low pressure (1.2×10−1 Pa) showed good tribological properties. New Raman peaks of G band were obtained. From the analysis of XPS, the nanocrystal graphite gives C1s binding energy of 284.8 eV. The electrical resistivity of the films was 10−2 Ω cm.