Synthesis of 6H-SiC nanowires on bamboo leaves by carbothermal method

6H silicon carbide (SiC) nanowires were fabricated on bamboo leaves infiltrated with tetraethyl orthosilicate (TEOS) by carbothermal method at 1300–1400 °C. The bamboo leaves were the carbon source and template for the growth of SiC. The TEOS was the silicon source. The crystalline structure, morphology, and the distribution of the prepared SiC were characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and high resolution transmission electron microscopy. The SiC had a hexagonal 6H- structure with diameter of 60 to 160 nm and length up to tens of microns. The yield of SiC grown on the top surface of the bamboo leaf was higher and had a branched structure. The SiC on the bottom surface showed a bamboo-like structure. The nanowires were mainly 6H phase, however cubic 3C-SiC phase was found on the divisions in the branch structure and the nodes in the bamboo-like structure. The difference in density of SiC nanowires between the two surfaces is proposed to be related to the structural and compositional differences of the two surfaces. TEOS was preferred to attach the hydrophilic top surface, which led to larger amount of SiC. Meanwhile, the Al content inside the bottom surface prohibited the growth of the SiC nanowires. The growth mechanism of the SiC nanowires is also discussed.

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► 6H-SiC nanowires were fabricated on both surfaces of bamboo leaves infiltrated with TEOS.
► On the hydrophilic top surface, SiC nanowires had a branched structure with a high yield.
► On the hydrophobic bottom surface, SiC nanowires were bamboo-like structured with a low yield.
► Al content in bottom surface retarded the SiC growth.
► Cubic SiC was found near the division in the branch 6H structure and the nodes in the bamboo-like structure.