کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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701867 | 891056 | 2011 | 4 صفحه PDF | دانلود رایگان |
Synthesis of carbon nanowalls was performed by a plasma-enhanced chemical vapor deposition in a CO/H2 microwave discharge system. At the optimum CO/H2 feed ratio of 46 sccm/4 sccm, the aligned carbon nanowalls with thickness of about several tens of nanometers were able to be synthesized. The extremely high growth rate of 1 μm min− 1 was obtained in our system with a relatively low microwave discharge power of 60 W for a growth area of 1 cm2. An optical emission spectroscopy was performed to clarify the characteristics of a CO/H2 discharge system.
Synthesis of carbon nanowalls by plasma-enhanced chemical vapor deposition in a CO/H2 microwave discharge system.Shinsuke Mori, Takanori Ueno and Masaaki SuzukiFigure optionsDownload as PowerPoint slideHighlights
► Carbon nanowalls were synthesized by a plasma-enhanced chemical vapor deposition in a CO/H2 microwave discharge system.
► At very high CO concentration of CO/(CO + H2) = 0.92, the aligned carbon nanowalls were able to be synthesized.
► An extremely high growth rate of 1 μm min− 1 has been obtained with a relatively low power of 60 W for a growth area of 1 cm2.
Journal: Diamond and Related Materials - Volume 20, Issue 8, August 2011, Pages 1129–1132