کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701882 | 891056 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Photoconductivity study of amorphous carbon nitride films for opto-electronics devices Photoconductivity study of amorphous carbon nitride films for opto-electronics devices](/preview/png/701882.png)
Single layered amorphous carbon nitride (a-CNx) films and a multilayered a-CNx film were prepared by reactive radio frequency magnetron sputtering of a graphite target and nitrogen gas. This paper describes the optical, electrical and opto-electrical properties of the a-CNx films. The optical band-gap of the single layered films increased with increasing nitrogen concentration, which was controlled through the deposition temperature. The photo-sensitivity values, a ratio of photo- and dark-conductivities, ranged from 2.2 to 6.0. In the multilayered film consisting of four a-CNx layers deposited at different temperatures, the photo-sensitivity of the multilayered film was over 1.2 times as compared with that of the single layered films.
Research highlights
► Increasing deposition temperature will decrease the optical gap of a-CNx films.
► The optical band-gap of a-CNx films depends on the nitrogen concentrations.
► Multilayered a-CNx films have a graded optical band-gap.
► A multilayered structure in a-CNx effects an improvement of photo-sensitivity.
Journal: Diamond and Related Materials - Volume 20, Issue 8, August 2011, Pages 1208–1211