Laser machining of GaN-on-diamond wafers

The commercialization of gallium-nitride microwave circuits on diamond substrates requires chip-dicing technology and via formation process compatible with standard semiconductor processes. This paper discusses issues related to dicing and drilling of GaN-on-diamond wafers for RF power transistor applications (die size < 1 mm2) using laser micromachining.

Research highlights
► Via formation and wafer scribing using laser machining of GaN-on-diamond wafers.
► Investigation of debris-free diamond wafer laser cutting.
► Laser machining of diamond in oxygen overpressure.
► Cleaving of laser-scribed GaN-on-diamond wafers into discrete AlGaN/GaN HEMT chips.