Simulation and design of junction termination structures for diamond Schottky diodes

In this paper, the first step of the design of a junction termination structure usable on diamond Schottky diodes is introduced. Through the collaboration of AMPERE and LAAS laboratories, a study of junction termination structures using field plates and semi-resistive materials was carried out. Several results from simulations of p-type Schottky diodes protected by MESA etching and coated with several layers of dielectric materials are shown in this paper. The analysis of those simulations, conducted on pseudo-vertical diodes protected by a field plate on a semi-resistive layer deposited on top of a dielectric, shows a great efficiency of such junction termination structures.

Research highlights
► In this study we investigate Schottky device behavior.
► Junction termination suitable to such device is simulated.
► New structure based on a multi layer of a dielectric and semi-resistive material.
► The behavior of the device with such junction termination structures is studied.
► We conclude on the efficiency of such junction termination structures.