کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701938 | 1460811 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Enhancement in the extraction efficiency and resisting electrostatic discharge ability of GaN-based light emitting diode by naturally grown textured surface Enhancement in the extraction efficiency and resisting electrostatic discharge ability of GaN-based light emitting diode by naturally grown textured surface](/preview/png/701938.png)
GaN-based light-emitting diodes (LEDs) with naturally textured surfaces were grown by metal-organic chemical vapor deposition (MOCVD). A naturally textured p-GaN surface layer was fabricated by controlling the growth temperature. The output power of light from the naturally textured surface GaN-based LED, whose p-GaN layer was grown at 850 °C, was 48.6% higher than that from a commercial GaN-based LED. The GaN-based LED with a naturally textured surface and a thick p-GaN layer with a thickness of 300 nm, which was grown at a high growth temperature, exhibited improved electrostatic discharge (ESD) resistance and could resist a reverse bias voltage of as high as 3500 V. The experimental results demonstrate that the naturally textured growth method combined with a p-GaN layer grown at high temperature is suitable for manufacturing high-efficient low-cost GaN-based LEDs.
Research highlights
► GaN-based LEDs with naturally textured surfaces were grown by MOCVD.
► GaN-based LEDs with naturally textured surfaces can enhance output power of light.
► GaN LED with a textured surface and a thick p-GaN layer can improve ESD resistance.
Journal: Diamond and Related Materials - Volume 20, Issues 5–6, May–June 2011, Pages 770–773