کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
702022 891065 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Diamond overgrown InAlN/GaN HEMT
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Diamond overgrown InAlN/GaN HEMT
چکیده انگلیسی

In this work the technology and characterization of nanocrystalline diamond (NCD) films directly grown on InAlN/GaN HEMTs is presented. Optimization of GaN based HEMT process steps including metallization stacks is discussed. A fully processed InAlN/GaN HEMT structure with 7 nm barrier has been overgrown in a temperature range of 750 °C to 800 °C with a 500 nm thick nanocrystalline diamond film in a Hot Filament CVD system. First results of semi-enhancement mode of DC and RF HEMT operation are reported. The grown NCD films were characterized by SEM, TEM, and Raman spectroscopy. Although no direct thermal conductivity measurements are conducted yet; the performed experiments shows the compatibility of growing high quality NCD films, several microns thick, on InAlN/GaN HEMTs as a potential material for heat extraction purposes.

Research Highlights
► Near lattice matched InAlN/GaN is highly thermally stable.
► This allows the overgrowth of high quality NCD films on top.
► First fully overgrown HEMTs with Rf operation was demonstrated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 20, Issue 4, April 2011, Pages 604–608
نویسندگان
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