کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
702078 1460779 2015 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Probing optical, phonon, thermal and defect properties of 3C–SiC/Si (001)
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Probing optical, phonon, thermal and defect properties of 3C–SiC/Si (001)
چکیده انگلیسی


• Optical, phonon, thermal and defect properties are reported for 3C-SiC/Si (001).
• Besides optical modes two weaker impurity modes are observed by Raman scattering.
• The broad band near 670 cm-1 lies close to the doublet seen in LT PL measurements.
• Realistic lattice dynamical calculations are performed to simulate phonon properties of both perfect and imperfect 3C-SiC.
• Gap-modes are calculated for isolated and nearest-neighbor anti-site pair defects.

Comprehensive results of experimental and theoretical studies are reported to probe the optical, phonon, thermal and defect properties of 3C–SiC/Si (001). By exploiting phonon-assisted Raman scattering (RS) spectroscopy we have recognized, among the conventional optical modes [TO(Γ) ~ 796 cm− 1 and LO(Γ) ~ 973 cm− 1], two extra phonon features near ~ 625 cm− 1 and 670 cm− 1 — possibly falling between the forbidden gap of the acoustic and optical branches. Temperature dependent profile of the unresolved ~ 670 cm− 1 band has indicated disordering by nearby defects and/or stress — rendering shorter phonon lifetime to instigate mode broadening. Accurate assessments of the lattice dynamical, thermal and defect properties are achieved by exploiting phonons from a rigid-ion model fitted to the inelastic x-ray scattering data and expending apposite group-theoretical selection rules. Lattice relaxations around Si/C atoms attained by the first-principles bond-orbital model for isolated defects have helped us to evaluate the necessary force constant variations for constructing perturbation matrices of the “complex-defect-centers”. For isolated anti-site CSi and SiC defects (Td-symmetry), our methodical Green's function (GF) theory has predicted triply degenerate F2 gap modes near 630 cm− 1 and 660 cm− 1, respectively. The GF simulations of impurity vibrations for a neutral nearest-neighbor anti-site SiC–CSi pair-defect (C3v-symmetry) provided gap-modes to appear within the broad ~ 670 cm− 1 band at 664.8 cm− 1 (a1) and 660.6 cm− 1 (e). The calculated results of localized vibrational modes are compared and discussed with phonon features observed in the RS experiments as well as with the density function theory.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 52, February 2015, Pages 1–10
نویسندگان
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