Fabrication and electrical properties of SrTiO3/diamond junctions

Strontium titanate (STO) films were directly deposited on Ib (100) single crystal diamond by r.f. magnetron sputtering. The as-deposited STO film was in amorphous state. On the other hand, the crystalline STO film was obtained under the optimized condition of a deposition temperature of 250 °C and a post-annealing temperature of 650 °C. STO/diamond junctions were fabricated on boron-doped homoepitaxial layers grown on p+-type single crystal diamond substrates. Electrical properties of the STO/diamond junction were investigated by changing the surface terminations of diamond with hydrogen or oxygen and the crystallinity of the STO film. It was found that the amorphous STO acted like a semi-insulator on H-diamond surface and that the amorphous STO/O-diamond junction behaved like a Schottky diode. The crystalline STO/O-diamond showed a complex rectifying behavior. The crystalline STO film possessed a higher dielectric constant as compared to that of the amorphous one.