کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702259 | 1460805 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Ferromagnetic Schottky junctions using diamond semiconductors Ferromagnetic Schottky junctions using diamond semiconductors](/preview/png/702259.png)
Schottky junctions, formed using various ferromagnetic metals and alloys, were fabricated on hydrogen-terminated (H-terminated) diamond, and their interfacial characteristics were evaluated. A clear work function dependence of the Schottky barrier height (ϕB) was obtained for these junctions, indicating that the Schottky barrier height between H-terminated diamond and ferromagnetic metals can be controlled by selecting metals with appropriate work functions. ϕB for Ni and NiFe, which have higher work functions above 5 eV, is lower than ϕB for other ferromagnetic metals. These results indicate that ferromagnetic metals with higher work function are promising for spin injection into diamond semiconductors.
► We fabricated ferromagnetic Schottky junctions using diamond semiconductors.
► We examined Schottky barrier heights between magnetic metals and H-terminated diamond.
► We showed ferromagnetic metals with higher work function are promising spin sources.
Journal: Diamond and Related Materials - Volume 25, May 2012, Pages 159–162