کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702429 | 1460806 | 2012 | 5 صفحه PDF | دانلود رایگان |
The decomposition reaction of CH3CN induced by the microwave discharge flow of Ar was applied to the formation of hydrogenated amorphous carbon nitride (a-CNx:H) films. A discussion was developed on whether CN(X2Σ+) radicals are the dominant source of N atoms of films based on the ratios of the fluxes Φa-CN/ΦCN(X) evaluated for the cases of CH3CN and BrCN as the starting materials. The flux of CN(X2Σ+) radicals arrived onto the substrate surface, ΦCN(X), was evaluated from the number density of CN(X2Σ+) radicals determined from the intensity measurement of the laser-induced fluorescence spectrum of the CN(A2Πi–X2Σ+), 4–0 band together with the flow speed measured by the time-resolved emission. The flux of N atoms incorporated into films, Φa-CN, was evaluated from the atomic-composition analysis by XPS and the mass of film. According to the discussions on the difference of the above ratios and on the electron densities in the reaction region, CN(X2Σ+) radicals are suggested to be the dominant N source of a-CNx:H films.
► A novel method is presented to identify the source of N atoms in a-CNx:H films.
► Films were formed from the decomposition of CH3CN in the microwave plasma of Ar.
► The CN(X2Σ+) radical density was evaluated by the LIF spectroscopy.
► The fluxes of N atoms incorporated into films and of CN radicals were evaluated.
► CN(X2Σ+) radicals are confirmed to be the dominant N source of a-CNx:H films.
Journal: Diamond and Related Materials - Volume 24, April 2012, Pages 121–125