کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
702475 1460823 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of triode type RF plasma enhanced CVD equipment for low temperature growth of carbon nanotube
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Development of triode type RF plasma enhanced CVD equipment for low temperature growth of carbon nanotube
چکیده انگلیسی

Triode-type radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) equipment has been developed in order to grow well-aligned carbon nanotubes on Si and glass substrates at 550 °C. The CVD equipment employs a grid electrode in addition to the cathode and anode electrodes. The grid electrode allows the growth of a well-aligned carbon nanotube with an inside and an outside diameter of 7 and 17 nm, respectively. Moreover, the patterning growth of the well-aligned CNT on a glass substrate was also demonstrated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issues 11–12, November–December 2005, Pages 1848–1851
نویسندگان
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