کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
702486 1460823 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of buffer layer materials and process conditions on growth mechanisms of forming networks of SWNTs by microwave plasma chemical vapor deposition
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Effects of buffer layer materials and process conditions on growth mechanisms of forming networks of SWNTs by microwave plasma chemical vapor deposition
چکیده انگلیسی

This study investigates the growth mechanism of IC compatible processes and to the feasibility of synthesizing networks of single-walled carbon nanotubes (SWNTs) at lower temperatures (∼610 °C) on Si wafer using microwave plasma chemical vapor deposition (MPCVD) with CH4 and H2 as source gases. The effects of the buffer layer materials (ZnS–SiO2, Al2O3, AlON, and AlN ) and process conditions on growth of carbon nanostructures with Co as catalyst were also examined, where the buffer layers and Co catalyst were deposited in sequence by physical vapor deposition (PVD), followed by H-plasma pretreatment before deposition of carbon nanostructures. Additionally, the morphologies and bonding structures of carbon nanostructures were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Raman Spectroscopy. Analytical results demonstrate that networks of SWNTs are more favorable to be synthesized by selecting proper buffer layer material (e.g., AlON), and under higher temperatures, thinner catalyst thickness (e.g., 5 nm) and lower CH4 / H2 ratio (e.g., 5 / 100 sccm/sccm). The networks of SWNTs can be fabricated at temperatures as low as ∼610 °C by manipulating these parameters. In conclusion, the growth mechanism determines the conditions for the formation of nano-sized extrusions on catalyst particles surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issues 11–12, November–December 2005, Pages 1906–1910
نویسندگان
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