کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702509 | 1460823 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
n-type conductivity of phosphorus-doped homoepitaxial single crystal diamond on (001) substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: n-type conductivity of phosphorus-doped homoepitaxial single crystal diamond on (001) substrate n-type conductivity of phosphorus-doped homoepitaxial single crystal diamond on (001) substrate](/preview/png/702509.png)
چکیده انگلیسی
The macroscopic surface morphology and crystallinity of (001) n-type diamond films, which have been quite recently achieved by P-doping using plasma-enhanced chemical vapor deposition technique, were studied. The observation of diffraction spots, streaks, and Kikuchi patterns in reflection high energy electron diffraction analysis indicated that the surface smoothness and the crystallinity were fine. Regarding the electrical properties of (001) n-type diamond films, Hall-effect measurements over a wide temperature range from 260 to 1000 K were investigated. The conduction band transport without the effect of hopping transport was confirmed within this experimental temperature range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issues 11–12, November–December 2005, Pages 2007–2010
Journal: Diamond and Related Materials - Volume 14, Issues 11–12, November–December 2005, Pages 2007–2010
نویسندگان
Hiromitsu Kato, Satoshi Yamasaki, Hideyo Okushi,