Selective growth of carbon nanotube at low temperate using triode type plasma enhanced CVD method

The low temperature growth and the selective growth of the carbon nanotube (CNT) were studied using the triode-type radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) equipment. The aligned CNTs −2.6 μm in length and −1011/cm2 in density were vertically grown at 550 °C on the Si substrate. Moreover, the selective growth of the CNT was performed using the photolithography method.

Research highlights
► The vertically aligned carbon nanotube was deposited at 550 °C by using triode type plasma enhanced CVD method.
► The selective growth of the CNT was performed using the photolithography method.
► This selective growth is a useful technique for formation of the CNT interconnection in integrated circuit (IC).
► The formation of the image of Mt. Fuji with the CNT was also demonstrated using this technique.