Charge carrier mobility in gallium nitride

The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in wurtzite n-GaN with impurity concentration 1.1 × 1016 cm− 3 ÷ 1.9 × 1018 cm− 3 and in wurtzite p-GaN with impurity concentration 1.9 × 1019 cm− 3 ÷ 2.6 × 1020 cm− 3 are considered. The temperature dependences of electron mobility in the range 15 ÷ 500 K and hole mobility in the range 100 ÷ 1000 K are calculated.

► The charge carrier scattering processes in wurtzite GaN are considered.
► The temperature dependence of the charge carriers mobility is calculated.
► The temperature dependence of the charge carriers Hall factor is calculated.