Fabrication of a field plate structure for diamond Schottky barrier diodes

We investigated a field plate structure using Al2O3. A field plate structure for a diamond Schottky barrier diode was fabricated and the electric breakdown properties were tested for electric field concentration and passivation. A Schottky barrier diode terminated using the field plate with a field oxide of Al2O3 showed about three times higher reverse blocking voltage than an unterminated one.