کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703158 | 891128 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-pressure high-temperature synthesis of GaN with melamine as the nitrogen source
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Micron-sized grains of gallium nitride (GaN) crystallizing in the Wurtzite phase were synthesized through a chemical reaction between gallium (Ga) metal and melamine (C3N6H6). The reaction occurred at the temperature range from 1073 to 1473 K and the pressure range from 3.5 to 5.5 GPa. X-ray diffraction (XRD) and transmission electron microscopy (TEM) investigations showed that the final black products mainly contained the clusters of tiny GaN crystals. Prism-like well-shaped single crystals were found in the TEM micrographs. A vapor–liquid–solid growth process was proposed to explain the growth mechanism of GaN in which the pyrolysis of melamine was responsible for the provision of reactive nitrogen.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issue 9, September 2006, Pages 1242–1245
Journal: Diamond and Related Materials - Volume 15, Issue 9, September 2006, Pages 1242–1245
نویسندگان
J. Zhang, Q. Cui, Y. Xie, H. Jiao, X. Li, Y. Wang, H. Ma, L. Shen, G. Zou,