کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703216 | 1460814 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method](/preview/png/703216.png)
چکیده انگلیسی
Using lift-off method, we synthesized large self-standing plasma CVD diamond films on various substrates. Charge carrier transportation in diamond was measured using α particle measurements and TOF methods with a short-pulsed UV laser. The high-quality films were synthesized rapidly. We observed the maximum transit time of holes and electrons shorter than 5 ns. The lift-off method is useful to fabricate the high-quality diamond with excellent drift velocities of the charge carrier. The charge transport characteristics of our diamond films are comparable to those of a commercially available (Element Six Ltd.) electronics grade IIa diamond single crystal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 19, Issues 2–3, February–March 2010, Pages 162–165
Journal: Diamond and Related Materials - Volume 19, Issues 2–3, February–March 2010, Pages 162–165
نویسندگان
F. Fujita, A. Kakimoto, J.H. Kaneko, N. Tsubouchi, Y. Mokuno, A. Chayahara, K. Sato, Y. Konno, A. Homma, S. Shikata, M. Furusaka,