کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
703313 1460821 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of homoepitaxial CVD diamond grown at moderate microwave power
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Characterization of homoepitaxial CVD diamond grown at moderate microwave power
چکیده انگلیسی

In this paper, we report on the characterization of homoepitaxial CVD diamond grown onto HPHT Ib diamond substrates by varying systematically the methane to hydrogen ratio in the deposition gas mixture (1–7%) and the microwave power (520–720 W). Growth rates up to approximately 2.2 μm/h have been achieved. X-ray diffraction, Raman spectroscopy and photoluminescence (PL) have been used to characterize the diamond samples. Raman measurements point out an excellent crystalline quality and phase purity of the homoepitaxial specimens even at the highest CH4 concentration used. Completely flat PL spectra registered in a wide energy range (1.7–2.7 eV) exclude impurity contamination of the diamond samples. Such results show that homoepitaxial CVD diamond can be grown, at moderate microwave power and with moderate growth rate, preserving a good crystalline quality.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issues 4–8, April–August 2006, Pages 517–521
نویسندگان
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