کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
703328 1460821 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Specific features of 325 nm Raman excitation of heavily boron doped polycrystalline diamond films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Specific features of 325 nm Raman excitation of heavily boron doped polycrystalline diamond films
چکیده انگلیسی

A set of MPCVD films was prepared from 0.5% CH4/H2 and B2H6 with B/C in the gas phase from 0 to 8000 ppm. When the excitation wavelength of their Raman spectra is switched from 632.8 to 325 nm: The Fano induced dip switches from high to low wave number side of the “1332 cm− 1” signal. The deformation and the downward shift of this signal decrease. The G band, diamond second order, CHx bands appear. The evolution of these bands with increasing B / C is reported and discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 15, Issues 4–8, April–August 2006, Pages 589–592
نویسندگان
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