کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703343 | 1460821 | 2006 | 5 صفحه PDF | دانلود رایگان |

Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm−3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron–phonon coupling.
Journal: Diamond and Related Materials - Volume 15, Issues 4–8, April–August 2006, Pages 659–663