کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703349 | 1460821 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond The role of (sub)-surface oxygen on the surface electronic structure of hydrogen terminated (100) CVD diamond](/preview/png/703349.png)
In this work, scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) were applied to investigate the surface morphology and the surface electronic structure of plasma-treated (100)-oriented CVD diamond films. These films were hydrogenated using a conventional MWPE-CVD (microwave plasma enhanced chemical vapour deposition) reactor containing a H2 or a H2 / O2 mixture. A comparison is made between (100)-oriented CVD diamond films hydrogenated with and without a small addition of oxygen (1%). X-ray Photoelectron Spectroscopy (XPS) and UV Photoelectron Spectroscopy (UPS) measurements point to the presence of O-atoms at the (sub)-surface of the diamond film. The measured conductivity is significantly different for the two processes of hydrogenation. Annealing experiments point out that the samples, which were terminated using the H2 / O2 mixture are still conductive enough after annealing at 410 °C to enable STM experiments. Here, we discuss the mechanism for STM imaging of H2 / O2 treated diamond films, associated with surface states induced by the oxygen incorporation.
Journal: Diamond and Related Materials - Volume 15, Issues 4–8, April–August 2006, Pages 687–691