Preparation of carbon nitride films by DC arc plasma jet CVD

Carbon nitride thin films were deposited on Si (100) substrates by DC arc plasma jet CVD. CH4 + N2 and graphite + N2 were used as carbon and nitrogen sources. FT-IR analysis revealed the C–N, C=N, C≡N bonds exist in the deposited films. When the graphite + N2 used as the precursor, the maximum deposition rate was about 3.2 μm/min. The maximum N / C composition ratio of deposited film from graphite + N2 was about 0.78, while that of the film deposited from CH4 + N2 was 0.41. These results suggest that the graphite is a suitable carbon source for deposition of carbon nitride thin films.