کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
703479 | 1460817 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Charge transport in high mobility single crystal diamond Charge transport in high mobility single crystal diamond](/preview/png/703479.png)
Time of Flight (TOF) measurements using conventional laser TOF and α-particle TOF setups have been carried out on high quality CVD diamond samples to study the electron and drift mobility and to compare them with the mobility data for IIA diamond. The measured mobilities for all samples investigated are in the range 2000–2250 cm2/Vs for holes and 2200–2750 cm2/Vs for electrons, thus close to the theoretical prediction as well as to IIa diamond mobility values. The charge transient profile measured in the laser TOF measurements is influenced by the electric field profile in the sample, which might be changed based on the charge trapping at low electric fields applied, depending on the surface atomic termination. The temperature dependence of the drift mobility indicates that at room temperature the scattering on acoustic phonons is the main dominant scattering mechanism and the contribution of other types of carrier scattering mechanism is negligible.
Journal: Diamond and Related Materials - Volume 17, Issues 7–10, July–October 2008, Pages 1235–1240