The voltage pulse degraded Ti/4H–SiC Schottky diodes studied with I–V and low frequency noise measurements

In this paper we discuss the results obtained after ESD voltage was stress applied to 4H–Silicon Carbide (4H–SiC) Schottky diodes. The Human Body Model (HBM) ESD voltage peaks of 3, 5 and 6 kV were applied to the cathode and anode separately and it was found that the diodes subjected to the cathode stress suffered greater degradation then the ones subjected to the anode stress. The recovery of the I–V characteristics after the stress was observed in the case of diodes subjected to the anode stress. Diode degradations were studied by I–V and low frequency (LF) noise measurements. Optical and electron microscopy inspection revealed the location of the degraded regions. The results of degradation are discussed using the equivalent electrical circuit of degraded diodes.