کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7111382 1460768 2016 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
X-ray photoelectron spectroscopy study of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond
ترجمه فارسی عنوان
مطالعه طیف سنجی فوتوالکترون اشعه ایکس مطالعه اتصالات شاتکی بر اساس الماس اکسیژن / فلوئور (100)
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی
In this study, investigation of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond (O-/F-diamond) film has been carried out. Both of the O-/F-diamond surfaces have been formed on different areas of one (100) diamond sample by O2 and CF4 plasma. Metals of Au, Pd, and Cu have been evaporated on the diamond surfaces to form Schottky junctions, whose barrier heights on O-/F-diamond have been investigated by X-ray photoelectron spectroscopy technique, the results of which indicate that the barrier heights of the metals on O-diamond are about 1.70 eV, and those on F-diamond are about 2.30 eV, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 63, March 2016, Pages 180-185
نویسندگان
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