کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7111487 | 1460787 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design of a new TM021 mode cavity type MPCVD reactor for diamond film deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
A new TM021 mode cavity type microwave plasma chemical vapor deposition (MPCVD) reactor for diamond film deposition was derived by analyzing the TM021 resonant pattern of microwave electric field in an idealized TM021 mode reactor. Important characteristics of the reactor, including microwave electric field, electron density, gas temperature as well as absorbed microwave power density were obtained by using a phenomenological model of hydrogen plasma. On the basis of the simulation, a new TM021 mode cavity type MPCVD reactor was built and 2-inch diameter freestanding diamond films were synthesized at 6Â kW input microwave power. Raman and optical transmission spectroscopy analyses indicate that the diamond films prepared by using the new TM021 mode cavity type reactor are of high quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 44, April 2014, Pages 88-94
Journal: Diamond and Related Materials - Volume 44, April 2014, Pages 88-94
نویسندگان
Y.F. Li, J.J. Su, Y.Q. Liu, M.H. Ding, X.L. Li, G. Wang, P.L. Yao, W.Z. Tang,