Nitrogen-incorporated nanodiamond vacuum field emission transistor with vertically configured self-aligning gate

► Vertically configured nitrogen-incorporated nanodiamond vacuum field emission transistor. ► Chemical vapor deposited nanodiamond in conjunction with self-aligned gate technique. ► Gate modulated transistor characteristics with a low threshold voltage of 25 V. ► High emission current of 160 μA with high voltage gain of 1000 for vacuum electronics application.