کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7116676 | 1461207 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxide-semiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage's temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38Ã10â6/°C when temperature is changed from â40 °C to 125 °C with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of â104.54 dB, â104.54 dB, â104.5 dB, â101.82 dB and â79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: The Journal of China Universities of Posts and Telecommunications - Volume 24, Issue 6, December 2017, Pages 74-82
Journal: The Journal of China Universities of Posts and Telecommunications - Volume 24, Issue 6, December 2017, Pages 74-82
نویسندگان
Zhou Qianneng, Zhu Ling, Li Hongjuan, Lin Jinzhao, Wang Liangcai, Luo Wei,