کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7117004 1461214 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Small-signal switch model of GaN HEMTs for MMIC applications
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Small-signal switch model of GaN HEMTs for MMIC applications
چکیده انگلیسی
Gallium nitride (GaN) high electron mobility transistor (HEMT) with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 × 125 μm gate width is fabricated to verify the model, which can be treated as a single pole single throw (SPST) switch due to the ON state and OFF state. The measurement results show a good agreement with the simulation results, which demonstrates the effectiveness of the proposed model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: The Journal of China Universities of Posts and Telecommunications - Volume 23, Issue 5, October 2016, Pages 56-60
نویسندگان
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