A new geometrical approach for rapid LED processing by using femtosecond laser

A new original method to reduce time and resource consuming photolithography mask production operations has been suggested. By means of femtosecond laser direct writing, thus, gaining cleaner surrounding than for nano- and pico-second pulse processing, a 45° angle ablation geometry has been proven. LED chip separation trenches and n-GaN layer exposure were made simultaneously saving from one fundamental processing and alignment step without adverse effect from the laser-processing on the quantum well region.