کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7137053 | 1461883 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Extremely high-performing heterojunction device by surficial length enhanced effect
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
چکیده انگلیسی
High-performing heterojunction devices were achieved by bringing an aluminum-doped ZnO (AZO) into contact with a p-Si substrate. A thin transparent AZO film was directly coated on pillar-array patterned Si and spontaneously formed a rectifying junction without any intentional doping process. Si pillar-arrays were designed to have 5 μm width with variation in periods (7 μm and 10 μm) used to modulate the surficial lengths. The light response is directly proportional to the surficial length enhancement. AZO/Si heterojunction devices showed strong dependence on the incident wavelengths. At a wavelength of 600 nm, the highest response ratio of 70,900% was achieved. We found that the locational superposition of the space charge region and the photo-generated region is crucial for light-reactive responses. We suggest an efficient geometric design scheme for highly efficient light-absorbers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 217, 15 September 2014, Pages 183-188
Journal: Sensors and Actuators A: Physical - Volume 217, 15 September 2014, Pages 183-188
نویسندگان
Jun Gi Kim, Joondong Kim,