کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7140275 | 1462025 | 2018 | 40 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization ethanol detection performance manifested by gas sensor based on In2O3/ZnS rough microspheres
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
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چکیده انگلیسی
For traditional resistance-type gas sensor, introducing heterostructures was an effective way to enhance the sensing performance. In this work, heterostructure In2O3/ZnS composites material with rough spherical morphology was synthesized by two-step hydrothermal process in which pure ZnS microspheres acted as substrate for the coating of In2O3 nanoparticles. The obtained products were characterized by X-ray diffraction (XRD), field-emission electron scanning microscopy (FESEM), transmission electron microscopy (TEM), elemental mapping, X-ray photoelectron spectroscopy (XPS) and Brunauere-Emmette-Teller (BET) analysis. When compared with the sensors based on pure ZnS microspheres and pure In2O3 nanocubes, the In2O3/ZnS heterostructures sensor had an excellent sensing performance to ethanol, and the response to 100â¯ppm ethanol was 11.7 which was nearly 2 times higher than that of pristine ZnS sensor (about 5.87) and 1.6 times larger than that of pristine In2O3 sensor (about 7.309) at the optimal operating temperature of 260â¯Â°C. The response/recovery time of In2O3/ZnS sensor were 21/34â¯s, whereas the pure samples were 32/59â¯s (ZnS) and 35/38â¯s (In2O3) respectively. The main mechanism for the enhanced performance of In2O3/ZnS composites sensor were the formation of heterojunction and synergistic effect between In2O3 shell and ZnS core, meanwhile, the large specific surface area was also a contribution factor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 264, 1 July 2018, Pages 263-278
Journal: Sensors and Actuators B: Chemical - Volume 264, 1 July 2018, Pages 263-278
نویسندگان
Q. Chen, S.Y. Ma, X.L. Xu, H.Y. Jiao, G.H. Zhang, L.W. Liu, P.Y. Wang, D.J. Gengzang, H.H. Yao,