کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7147092 | 1462095 | 2014 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High sensing response of β-Ga2O3 thin film towards ammonia vapours: Influencing factors at room temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High sensing response of β-Ga2O3 thin film towards ammonia vapours: Influencing factors at room temperature High sensing response of β-Ga2O3 thin film towards ammonia vapours: Influencing factors at room temperature](/preview/png/7147092.png)
چکیده انگلیسی
The gallium oxide (β-Ga2O3) thin films were deposited onto a quartz substrate using spray pyrolysis technique with gallium acetylacetonate as precursor salt. The X-ray diffraction pattern of the annealed film at 900 °C indicated the formation of monoclinic β-Ga2O3 phase with polycrystalline nature. Field emission scanning electron micrograph showed nanocrystallites over the film surface. The ammonia sensing property of the film at room temperature (â¼30 °C) was studied by chemiresistive method. Influencing factors such as vapour concentration, relative humidity and film thickness in ammonia sensing performance were studied and reported.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 195, May 2014, Pages 206-214
Journal: Sensors and Actuators B: Chemical - Volume 195, May 2014, Pages 206-214
نویسندگان
R. Pandeeswari, B.G. Jeyaprakash,