کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7210252 | 1469204 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improving Al Wettability on B4C by Transition Metal Doping: a Combined DFT and Experiment Study
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک مواد
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چکیده انگلیسی
B4C/Al MMC is one of the most potential neutron-shielding materials. The poor wettability of B4C/Al interface damages the mechanical properties. To understand the alloying (or doping) effects in improving the wettability of B4C/Al interfaces, we investigated the Al(111)/AlB2(0001) and Al(111)/TiB2(0001) interfacial structures via a combined approach of experiment and DFT calculations. We find a larger work of adhesion (Wad) on the Al(111)/TiB2(0001) than the Al(111)/AlB2(0001) interfaces. The subsequently calculated partial density of states (PDOS) of doped-diborides show fewer anti-bonding states in Al(111)/TiB2(0001) than in Al(111)/AlB2(0001), which contribute to a stronger bonding between Ti-3d and B-2p states and lead to a higher Wad and better wetting. Furthermore, we predict improved wettability of Al/B4C by V-doping, because of the fewer anti-bonding states in vanadium-boron molecular orbitals. The same approach developed in this study may be applied for general design of alloy elements to improve the interfacial wetting of alloy-semiconductor systems.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metal Materials and Engineering - Volume 46, Issue 9, September 2017, Pages 2345-2351
Journal: Rare Metal Materials and Engineering - Volume 46, Issue 9, September 2017, Pages 2345-2351
نویسندگان
Wang Zhixuan, Li Qiulin, Zheng Jiyun, Liu Wei, Shu Guogang, Wu Ping, Xu Ben,