کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7210411 | 1469209 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Annealing Temperature on Photoluminescence of ZnO/Graphene Nano-films Deposited by Sol-gel Method
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک مواد
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of Annealing Temperature on Photoluminescence of ZnO/Graphene Nano-films Deposited by Sol-gel Method Effect of Annealing Temperature on Photoluminescence of ZnO/Graphene Nano-films Deposited by Sol-gel Method](/preview/png/7210411.png)
چکیده انگلیسی
ZnO/graphene nano-films were directly prepared on Cu substrate via low pressure chemical vapor deposition (LPCVD) combined with a sol-gel method. The effects of the annealing temperature on the structure, morphology, the chemical state, component, and optical property of these ZnO/graphene nano-films were investigated. The XRD patterns demonstrate that the ZnO/graphene nanostructures exhibit the hexagonal wurtzite structure and the crystalline quality increases with increasing the annealing temperatures from 500 °C to 700 °C. When the annealing temperature reaches 700 °C, SEM analysis shows that sample film exhibits dense and uniform grains and smooth surface and the average grain size of film deposited 3 layers is about 35.7 nm. The PL measurement confirms that ZnO/graphene nano-film with deposited 3 layers at the annealing temperatures of 700 °C has a better optical performance, due to the higher crystalline quality and lower defect concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metal Materials and Engineering - Volume 46, Issue 4, April 2017, Pages 888-892
Journal: Rare Metal Materials and Engineering - Volume 46, Issue 4, April 2017, Pages 888-892
نویسندگان
Liu Jin, Lv Yuanyuan, Zhang Zhiyong, Yan Junfeng, Zhao Wu, Yun Jiangni, Zhai Chunxue,