کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7210489 | 1469211 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain Effect Analysis on Thermal Conductivity of Ge Thin Films
ترجمه فارسی عنوان
تجزیه و تحلیل اثر کرنش بر روی هدایت حرارتی فیلم های نازک جی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک مواد
چکیده انگلیسی
The effects of strains on the thermal conductivity of Ge thin films were studied by nonequilibrium molecular dynamics (NEMD) simulations. The results show that the strains have an appreciable influence on the thermal conductivity of Ge thin films. The thermal conductivity decreases as the tensile strain increases and increases as the compressive strain increases, because of the decrease in the phonons velocities and the surface reconstructions. Meanwhile, a theoretical calculation based on Modified-Callaway model under different strains was performed to verify our NEMD simulation results. We find that the theoretical results closely match the molecular dynamics results. The theoretical analysis reveals that the contributions of the relaxation time on strains are very important to the thermal conductivity of Ge thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metal Materials and Engineering - Volume 46, Issue 2, February 2017, Pages 370-374
Journal: Rare Metal Materials and Engineering - Volume 46, Issue 2, February 2017, Pages 370-374
نویسندگان
Zhang Xingli, Gong Cuizhi, Wu Guoqiang,